Sign In | Join Free | My chinacomputerparts.com |
|
Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature : -
Vgs(th) (Max) @ Id : 4V @ 8mA
Operating Temperature : -55°C ~ 150°C (TJ)
Package / Case : TO-247-3 Variant
Gate Charge (Qg) (Max) @ Vgs : 390 nC @ 10 V
Rds On (Max) @ Id, Vgs : 8mOhm @ 90A, 10V
FET Type : N-Channel
Drive Voltage (Max Rds On, Min Rds On) : 10V
Package : Tube
Drain to Source Voltage (Vdss) : 100 V
Vgs (Max) : ±20V
Product Status : Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds : 10900 pF @ 25 V
Mounting Type : Through Hole
Series : HiPerFET™
Supplier Device Package : PLUS247™-3
Mfr : IXYS
Current - Continuous Drain (Id) @ 25°C : 180A (Tc)
Power Dissipation (Max) : 560W (Tc)
Technology : MOSFET (Metal Oxide)
Base Product Number : IXFX180
Description : MOSFET N-CH 100V 180A PLUS247
![]() |
IXFX180N10 Images |
Friendly Links: www.everychina.com
Home| Products| Suppliers| Site Map |About Us |Contact Us |Help |关于我们 |联系我们
Thank you! Your message has been sent to the following suppliers.