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BSH205G2R

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BSH205G2R

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 950mV @ 250µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : TO-236-3, SC-59, SOT-23-3

Gate Charge (Qg) (Max) @ Vgs : 6.5 nC @ 4.5 V

Rds On (Max) @ Id, Vgs : 170mOhm @ 2A, 4.5V

FET Type : P-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 20 V

Vgs (Max) : ±8V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 418 pF @ 10 V

Mounting Type : Surface Mount

Series : Automotive, AEC-Q100

Supplier Device Package : TO-236AB

Mfr : Nexperia USA Inc.

Current - Continuous Drain (Id) @ 25°C : 2A (Ta)

Power Dissipation (Max) : 480mW (Ta)

Technology : MOSFET (Metal Oxide)

Base Product Number : BSH205

Description : MOSFET P-CH 20V 2A TO236AB

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P-Channel 20 V 2A (Ta) 480mW (Ta) Surface Mount TO-236AB
China BSH205G2R factory

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