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FDMS86263P

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FDMS86263P

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4V @ 250µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : 8-PowerTDFN

Gate Charge (Qg) (Max) @ Vgs : 63 nC @ 10 V

Rds On (Max) @ Id, Vgs : 53mOhm @ 4.4A, 10V

FET Type : P-Channel

Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 150 V

Vgs (Max) : ±25V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 3905 pF @ 75 V

Mounting Type : Surface Mount

Series : PowerTrench®

Supplier Device Package : 8-PQFN (5x6)

Mfr : onsemi

Current - Continuous Drain (Id) @ 25°C : 4.4A (Ta), 22A (Tc)

Power Dissipation (Max) : 2.5W (Ta), 104W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : FDMS86263

Description : MOSFET P-CH 150V 4.4A/22A 8PQFN

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P-Channel 150 V 4.4A (Ta), 22A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
China FDMS86263P factory

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