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IXTQ170N10P

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Encoders, Decoders, Multiplexers & Demultiplexers [83]
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FFC & FPC Connectors [131]
Multiplexer Switch ICs [101]
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RF Front End [27]
Industrial Temperature Sensors [2]
RF Transceiver [7]
RF Mixer [9]
RF Receiver [49]
RFID Transponders [1]
Surface Mount Fuses [155]
RF Amplifier [190]
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Position, Proximity, Speed (Modules) - Industrial [4]
Inclinometers [4]
Compass, Magnetic Field (Modules) [5]
Photo Detectors - Logic Output [1]
Photoelectric, Industrial [1]
NTC Thermistors [40]

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IXTQ170N10P

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 5V @ 250µA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : TO-3P-3, SC-65-3

Gate Charge (Qg) (Max) @ Vgs : 198 nC @ 10 V

Rds On (Max) @ Id, Vgs : 9mOhm @ 500mA, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tube

Drain to Source Voltage (Vdss) : 100 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 6000 pF @ 25 V

Mounting Type : Through Hole

Series : Polar

Supplier Device Package : TO-3P

Mfr : IXYS

Current - Continuous Drain (Id) @ 25°C : 170A (Tc)

Power Dissipation (Max) : 715W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : IXTQ170

Description : MOSFET N-CH 100V 170A TO3P

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N-Channel 100 V 170A (Tc) 715W (Tc) Through Hole TO-3P

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