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Part Number : SI7958DP-T1-E3
Manufacturer : Vishay / Siliconix
Description : SI7958DP-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay / Siliconix stock available at Tanssion
Lifecycle : New from this manufacturer
Datasheet : SI7958DP-T1-E3.pdf
Delivery : DHL、UPS、FedEx、Registered Mail
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More Information : SI7958DP-T1-E3 More Information
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Pricing(USD) : $0.00
Remark : Manufacturer: Vishay / Siliconix. Tanssion is one of the Distributors. Wide range of applications.
Mount : Surface Mount
Height : 1.04 mm
Weight : 506.605978 mg
Rise Time : 17 ns
Resistance : 16.5 mΩ
Case/Package : SOIC
Power Dissipation : 1.4 W
Number of Channels : 2
Turn-On Delay Time : 17 ns
Element Configuration : Dual
Max Operating Temperature : 150 °C
Drain to Source Resistance : 16.5 mΩ
Continuous Drain Current (ID) : 7.2 A
Drain to Source Breakdown Voltage : 40 V
Products Category : Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty : 322 In Stock
Applications : Body electronics & lighting Electronic point of sale (EPOS) Wearables (non-medical)
Width : 5.89 mm
Length : 4.9 mm
Fall Time : 17 ns
Rds On Max : 16.5 mΩ
Nominal Vgs : 3 V
Number of Pins : 8
Threshold Voltage : 3 V
Number of Elements : 2
Turn-Off Delay Time : 66 ns
Max Power Dissipation : 1.4 W
Min Operating Temperature : -55 °C
Gate to Source Voltage (Vgs) : 20 V
Drain to Source Voltage (Vdss) : 40 V
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